(China (Mainland))
Product Summary
The IRF1010EZPBF is an automotive mosfe. Specifically designed for Automotive applications, the IRF1010EZPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parametrics
IRF1010EZPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V (Silicon Limited):84A; (2)Continuous Drain Current, VGS @ 10V (See Fig. 9):60A; (3)Continuous Drain Current, VGS @ 10V (Package Limited):75A; (4)Pulsed Drain Current:340A; (5)Linear Derating Factor:0.90W/℃; (6)Gate-to-Source Voltage:±20V; (7)Single Pulse Avalanche Energy (Thermally Limited):99mJ; (8)Single Pulse Avalanche Energy Tested Value:180mJ; (9)Operating Junction and Storage Temperature Range:-55 to 175℃.
Features
IRF1010EZPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax; (7)Lead-Free.
Diagrams
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Pricing (USD) |
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 IRF1010EZPBF |
International Rectifier |
MOSFET MOSFT 60V 84A 8.5mOhm 58nC |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
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IRF1010EL |
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MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
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IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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